收藏本站
RJK6025DPD
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
Symbol
V (BR)DSS
I DSS
I GSS
V GS(off)
R DS(on)
Min
600
—
—
3
—
Typ
—
—
—
—
13.5
Max
—
1
±0.1
5
17.5
Unit
V
? A
? A
V
?
Test conditions
I D = 10 mA, V GS = 0
V DS = 600 V, V GS = 0
V GS = ? 30 V, V DS = 0
V DS = 10 V, I D = 1 mA
I D = 0.5 A, V GS = 10 V Note3
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Ciss
Coss
Crss
t d(on)
t r
t d(off)
t f
Qg
Qgs
Qgd
V DF
t rr
—
—
—
—
—
—
—
—
—
—
—
—
37.5
7.5
0.9
30
14.5
48
77
5.0
0.7
3.3
0.85
230
—
—
—
—
—
—
—
—
—
—
1.45
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
V DS = 25 V
V GS = 0
f = 1 MHz
I D = 0.2 A
V GS = 10 V
R L = 1500 ?
Rg = 10 ?
V DD = 480 V
V GS = 10 V
I D = 1.0 A
I F = 1.0 A, V GS = 0 Note3
I F = 0.4 A, V GS = 0
di F /dt = 100 A/ ? s
Notes: 3. Pulse test
4. Since this device is equipped with high voltage FET chip (V DSS ?? 600 V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
5. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0676EJ0100Rev.1.00
Feb 17, 2012
Page 2 of 6
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
RJP020N06T100 MOSFET N-CH 60V 2A SOT-89
RL3004-6.56-59-D1 THERMISTOR NTC 10 OHM @ 25C
RL4504-3.28-59-D1 THERMISTOR NTC 5 OHM @ 25C
RMW130N03TB MOSF N CH 30V 13A PSOP8
RMW150N03TB MOSF N CH 30V 15A PSOP8
RMW180N03TB MOSF N CH 30V 18A PSOP8
RMW200N03TB MOSF N CH 30V 20A PSOP8
RMW280N03TB MOSF N CH 30V 28A PSOP8
相关代理商/技术参数
RJK6025DPE 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
RJK6025DPE_12 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:600V - 0.8A - MOS FET High Speed Power Switching
RJK6025DPE-00#J3 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 600V 0.8A LDPAK
RJK6025DPE-00J3 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:600V - 0.8A - MOS FET High Speed Power Switching
RJK6025DPE-00-J3 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
RJK6025DPH-E0 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:600V - 1A - MOS FET High Speed Power Switching
RJK6025DPH-E0#T2 制造商:Renesas Electronics Corporation 功能描述:MOSFET, 600V - Rail/Tube
RJK6025DPH-E0T2 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:600V - 1A - MOS FET High Speed Power Switching